The FM25V02A-G(TR) is a 256 Kbit (32 KB) non-volatile Ferroelectric Random Access Memory (FRAM) developed by Cypress (now Infineon). It combines the high-speed read/write performance of RAM with the non-volatile characteristics of ROM/Flash, featuring extremely high write endurance and low power consumption. The device uses the industry-standard Serial Peripheral Interface (SPI), supporting a maximum clock frequency of 20 MHz. It allows direct read/write operations at bus speed without write delays.
Compared to traditional EEPROM or Flash memory, the FM25V02A offers not only fast write speeds (no wait time) but also significantly higher endurance (up to 1014 read/write cycles), making it ideal for applications requiring frequent data logging, such as smart meters, industrial data recorders, and automotive black boxes. The suffix (TR) indicates the product is packaged in Tape & Reel, suitable for automated pick-and-place production; -G denotes a RoHS-compliant, lead-free package.
| Parameter | Specification |
|---|---|
| Memory Type | FRAM (Ferroelectric RAM) |
| Capacity | 256 Kbit (32 KB) |
| Interface | SPI (Up to 20 MHz) |
| Supply Voltage (VCC) | 2.7V ~ 3.6V |
| Write Endurance | 1.0×1014 Read/Write Cycles |
| Data Retention | 10 Years @ 85°C |
| Write Speed | No Delay (Bus Speed) |
| Package | SOP-8 |
| Pin Count | 8 (CS#, SO/SIO1, WP#/SIO2, GND, SI/SIO0, SCLK, HOLD#/SIO3, VCC) |
| Operating Temp | -40°C ~ +85°C (Industrial) |
| Typical Applications | Data Acquisition, Parameter Storage, Event Logging |
Note: On some SOP-8 packages, the WP# and HOLD# pins may be multiplexed as SIO2 and SIO3 (QSPI mode). Please refer to the datasheet for details.
WREN (Write Enable) command must be sent before any write operation.