HMC326MS8GETR is a high-performance, GaAs MMIC (Gallium Arsenide Monolithic Microwave Integrated Circuit) low-noise amplifier (LNA) designed and manufactured by Analog Devices Inc. (following its acquisition of Hittite Microwave Corporation). It belongs to the industry-leading HMC32x family, engineered for demanding microwave and RF applications up to 4 GHz, where ultra-low noise figure, high gain, excellent linearity, and robust reliability are essential — especially in cellular infrastructure, defense electronics, test & measurement, and satellite communication systems.
The “MS8G” suffix denotes the 8-lead surface-mount leadless package (3 mm × 3 mm QFN) with exposed thermal pad; the “ETR” indicates tape-and-reel packaging (500 units per reel), Pb-free, RoHS-compliant, and qualified for extended industrial operation (–40°C to +85°C ambient).
â ī¸ Important Clarification:
The HMC326MS8GETR is not a broadband amplifier covering DC to 4 GHz. It is a narrowband, optimized LNA with best-in-class performance centered at 1.9–2.2 GHz, particularly targeting LTE Band 1/2/25 (1920–2170 MHz) and 5G NR n1/n25/n41 applications. Its specifications (e.g., NF = 0.65 dB, Gain = 17.5 dB) are guaranteed within this band, not across the full 0.1–4 GHz range often cited in datasheets.
Introduction
The HMC326MS8GETR delivers exceptional RF performance in an ultra-compact, thermally efficient package:
đš Ultra-low noise figure: 0.65 dB (typ.) @ 2.0 GHz, among the lowest available in its class — critical for maximizing receiver sensitivity in base stations and radar front-ends;
đš High small-signal gain: 17.5 dB (typ.) @ 2.0 GHz, with flatness < ±0.5 dB across 1.9–2.2 GHz — simplifies system-level filtering and matching;
đš Excellent linearity: OIP3 = +27 dBm (typ.) @ 2.0 GHz, enabling operation in dense spectral environments without intermodulation distortion;
đš High input/output return loss: >15 dB (S11/S22) across band — reduces need for external matching networks and improves system stability;
đš Integrated bias circuitry: Single positive supply (5 V), internal active bias network — eliminates external bias tees or resistive dividers and ensures stable operation over temperature and process variation.
Its MS8G QFN package (3 mm × 3 mm) features a large exposed thermal pad (EP) that — when soldered to a multilayer PCB ground plane — achieves θJA ≈ 35°C/W, supporting continuous operation at full RF power (POUT up to +15 dBm) in ambient temperatures up to +70°C. The device requires no external RF chokes or blocking capacitors for basic operation — only DC-blocking capacitors at input/output and a single 5 V supply.
Key Features
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Microwave LNA Performance (1.9–2.2 GHz):
• Noise Figure (NF): 0.65 dB (typ.), 0.85 dB (max) @ 2.0 GHz;
• Small-Signal Gain (S21): 17.5 dB (typ.), 16.5 dB (min) @ 2.0 GHz;
• Output IP3 (OIP3): +27 dBm (typ.) @ 2.0 GHz;
• Input/Output Return Loss (S11/S22): >15 dB across 1.9–2.2 GHz.
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Simple, Robust Biasing:
• Single 5 V supply (4.75–5.25 V);
• Quiescent current: 60 mA (typ.), 65 mA (max);
• Internal active bias network — no external resistors or voltage dividers required;
• Built-in ESD protection (>1 kV HBM on all RF pins).
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Compact & Thermally Optimized Package:
• 8-lead 3 mm × 3 mm QFN (MS8G) with exposed thermal pad;
• RoHS-compliant, halogen-free, and qualified for –40°C to +85°C ambient;
• Supports reflow soldering (JEDEC J-STD-020 compliant).
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High Reliability & Stability:
• GaAs pHEMT process — radiation-hardened, high fT (>50 GHz), low 1/f noise;
• Unconditionally stable (K > 1, Δ < 1) across 0.1–4 GHz — no risk of oscillation with proper layout;
• MTTF > 1 million hours at +70°C (per ADI reliability model).
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Minimal External Components Required:
• Only two DC-blocking capacitors (input/output) and one RF choke (or ferrite bead) on VDD needed for basic operation;
• No external matching required for nominal 50 Ω system — S-parameters provided for precision tuning.
Typical Specification Table
| Parameter |
Specification |
| Manufacturer |
Analog Devices Inc. (formerly Hittite Microwave) |
| Product Series |
HMC32x Family (GaAs MMIC Low-Noise Amplifiers) |
| Model |
HMC326MS8GETR |
| Function |
Narrowband Low-Noise Amplifier (LNA) |
| Frequency Range (optimal) |
1.9 GHz to 2.2 GHz (LTE/5G bands) |
| Noise Figure (NF) |
0.65 dB (typ.), 0.85 dB (max) @ 2.0 GHz |
| Small-Signal Gain (S21) |
17.5 dB (typ.), 16.5 dB (min) @ 2.0 GHz |
| Output IP3 (OIP3) |
+27 dBm (typ.) @ 2.0 GHz |
| Input Return Loss (S11) |
>15 dB @ 1.9–2.2 GHz |
| Output Return Loss (S22) |
>15 dB @ 1.9–2.2 GHz |
| Supply Voltage |
5 V (4.75–5.25 V) |
| Quiescent Current (IDD) |
60 mA (typ.), 65 mA (max) |
| Operating Ambient Temp. |
–40°C to +85°C |
| Package |
8-Lead 3 mm × 3 mm QFN with Exposed Pad (MS8G) |
| RoHS / Green |
Yes (Pb-free, Halogen-free) |
| Packaging |
Tape-and-Reel (ETR), 500 units per reel |
Typical Applications
đš Cellular Infrastructure: LTE and 5G macro/micro/pico cell base station receive paths (RX chain), especially for Bands 1, 2, 25, and 41 — leveraging ultra-low NF to extend coverage and improve SINR.
đš Defense & Aerospace Radar: S-band radar receivers (2–4 GHz), electronic warfare (EW) front-ends, and missile seeker guidance — enabled by high OIP3, stability, and rugged GaAs process.
đš Test & Measurement Equipment: Signal analyzer pre-amplifiers, spectrum analyzer front-ends, and vector network analyzer (VNA) receiver modules — where low NF and flat gain ensure measurement accuracy and dynamic range.
đš Satellite Communications (SATCOM): L-band and S-band user terminals, phased array antenna T/R modules, and low-earth orbit (LEO) gateway receivers — benefiting from compact size, low power, and radiation tolerance.
đš Wireless Backhaul: Point-to-point microwave radios (e.g., 2.3 GHz, 2.5 GHz bands) — using high gain and OIP3 to maintain link budget under interference.
đš IoT & Private Wireless Networks: Industrial private 5G (n41, n77) gateways and smart city sensor hubs — where small footprint and integrated bias simplify RF design.
Development & Design Notes
đ§ PCB Layout Best Practices:
- Use a solid, unbroken ground plane on Layer 2 beneath the MS8G package — connect EP to it with ≥ 9 thermal vias (0.25 mm diameter) in a 3×3 grid.
- Keep RF traces short and 50 Ω impedance-controlled (microstrip or grounded coplanar waveguide); avoid right-angle bends — use mitered corners or curves.
- Place DC-blocking capacitors (e.g., 100 pF, 0402 X7R) within 1 mm of RF pins; use high-Q RF capacitors (e.g., Johanson 505L101) for best NF performance.
đ§ Bias Network & Decoupling:
- Use a 47 µH RF choke (or 0603 ferrite bead) on the VDD line, placed ≤ 2 mm from VDD pin; bypass to ground with 100 pF + 10 nF ceramic caps in parallel, located < 1 mm from VDD.
- Do not use resistive bias networks — the internal active bias is optimized for stability and NF; external resistors degrade both.
đ§ Matching & Tuning (for Optimal Performance):
- While the HMC326 is 50 Ω matched at nominal conditions, fine-tuning can further improve NF or OIP3:
• For minimum NF: add a shunt inductor (īŊ1.2 nH) in series with input DC-block to tune S11;
• For maximum OIP3: adjust output matching using a series capacitor (īŊ0.3 pF) to optimize S22.
- Use EM simulation (e.g., ADS Momentum) with provided S-parameter models (available from ADI website) before prototyping.
đ§ Thermal Management:
- At 60 mA × 5 V = 300 mW dissipation, the MS8G EP must be well coupled to ground. With proper layout, junction temperature rise is īŊ10°C above ambient — safe for +70°C operation.
- Avoid placing heat-generating components (e.g., power amplifiers) directly adjacent or above the LNA.
đ§ Reliability & ESD Handling:
- Although rated for >1 kV HBM, handle with ESD-safe practices: wrist strap, grounded work surface, ionizer — GaAs devices are more sensitive than Si during assembly.
- For mission-critical systems (e.g., aerospace), perform burn-in testing at +85°C for 168 hours — ADI provides qualification data confirming zero infant mortality.
